Process Optimization of Aqueous Post-CMP Cleaning Architectures for Sub-14nm Logic Nodes: Mechanisms, Process Control and Future Scaling

Chemical Mechanical Planarization (CMP) is the primary enabling technology for achieving global planarization in advanced integrated circuit (IC) manufacturing. However, the CMP process inherently introduces defects including slurry nanoparticles, organic residues, and metallic ions that can catastrophically impact yield. This paper reviews the background and critical importance of Post-CMP (PCMP) cleaning, focusing on advanced aqueous formulations for Copper (Cu), Cobalt (Co), and Tungsten (W) applications. We experimentally validate the critical roles of filtration and mixing kinetics in minimizing defects. Finally, we propose future process improvements, including "smart" filtration and dynamic mixing control, required to support Angstrom-era scaling.